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In this work, the mechanisms regulating the selective area growth (SAG) of GaN-based nanostructures have been investigated, under different growth conditions, with the aim of improving the control over the growth of InGaN/GaN heterostructures. First of all, starting from the knowledge already acquired in the group concerning the growth of GaN arrays on Molybdenum mask, the morphological evolution of GaN SAG nanostructures, grown on Mo and Ti mask, has been further investigated, as a function of the nominal fluxes ratio, as well as as a function of the growth time and the lithographed nanoh...
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